1. product pro?le 1.1 general description a 500 w ldmos rf power transistor for broadcast transmitter applications and industrial applications. the transistor is optimized for digital applications and can deliver 110 w average dvb-t broadband over the full uhf band from 470 mhz to 860 mhz. the excellent ruggedness of this device makes it ideal for digital transmitter applications. [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. 1.2 features n 2-tone performance at 860 mhz, a drain-source voltage v ds of 50 v and a quiescent drain current i dq = 1.4 a: u peak envelope power load power = 500 w u power gain = 20 db u drain ef?ciency = 45 % u third order intermodulation distortion = dbc n dvb performance at 858 mhz, a drain-source voltage v ds of 50 v and a quiescent drain current i dq = 1.4 a: u average output power = 110 w u power gain = 20 db u drain ef?ciency = 30 % u shoulder distance = - 32 dbc (4.3 mhz from center frequency) n integrated esd protection n advanced ?ange material for optimum thermal behavior and reliability BLF888 uhf power ldmos transistor rev. 01 16 december 2008 objective data sheet table 1. application information rf performance at v ds = 50 v in a common source 860 mhz narrowband test circuit unless otherwise speci?ed. mode of operation f p l(pep) p l(av) g p h d imd3 imd shldr (mhz) (w) (w) (db) (%) (dbc) (dbc) 2-tone, class ab f 1 = 860; f 2 = 860.1 500 250 20 45 - dvb-t (8k ofdm) 858 - 110 20 30 - - 32 [1] caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
BLF888_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01 16 december 2008 2 of 8 nxp semiconductors BLF888 uhf power ldmos transistor n excellent ruggedness n high power gain n high ef?ciency n designed for broadband operation (470 mhz to 860 mhz) n excellent reliability n internal input matching for high gain and optimum broadband operation n easy power control n compliant to directive 2002/95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications n communication transmitter applications in the uhf band n industrial applications in the uhf band 2. pinning information [1] connected to ?ange. 3. ordering information 4. limiting values table 2. pinning pin description simpli?ed outline graphic symbol 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] 5 2 4 1 3 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLF888 - ?anged ldmost ceramic package; 2 mounting holes; 4 leads sot979a table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 104 v v gs gate-source voltage - 0.5 +13 v t stg storage temperature - 65 +150 c t j junction temperature - 200 c
BLF888_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01 16 december 2008 3 of 8 nxp semiconductors BLF888 uhf power ldmos transistor 5. thermal characteristics [1] r th(j-c) is measured under rf conditions. 6. characteristics [1] i d is the drain current. [2] capacitance values without internal matching. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 c; p l(av) = 110 w [1] 0.23 k/w table 6. dc characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 2.7 ma [1] 104 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 270 ma [1] 1.4 1.9 2.4 v i dss drain leakage current v gs =0v; v ds =50v - - 2.8 m a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v - 44 - a i gss gate leakage current v gs = 10 v; v ds = 0 v - - 280 na g fs forward transconductance v gs = 10 v; i d = 13.5 a [1] - - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 9.5 a [1] - 105 - m w c iss input capacitance v gs = 0 v; v ds =50v; f=1mhz [2] - 205 - pf c oss output capacitance v gs = 0 v; v ds =50v; f=1mhz [2] -65-pf c rss reverse transfer capacitance v gs = 0 v; v ds =50v; f=1mhz [2] - 2.2 - pf table 7. rf characteristics t h =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit 2-tone, class ab v ds drain-source voltage - 50 - v i dq quiescent drain current total device - 1.4 - a p l(pep) peak envelope power load power 250 - - w p l(av) average output power 250 - - w g p power gain 18 - - db h d drain ef?ciency 42 - - % imd3 third order intermodulation distortion - - dbc dvb-t (8k ofdm) v ds drain-source voltage - 50 - v i dq quiescent drain current total device - 1.4 - a p l(av) average output power 110 - - w g p power gain 18 - - db
BLF888_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01 16 december 2008 4 of 8 nxp semiconductors BLF888 uhf power ldmos transistor [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. [2] par (of output signal) at 0.01 % probability on ccdf; par of input signal = 9.5 db at 0.01 % probability on ccdf. 6.1 ruggedness in class-ab operation the BLF888 is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds = 50 v; f = 860 mhz at rated power. h d drain ef?ciency - - % imd shldr intermodulation distortion shoulder [1] - - dbc par peak-to-average ratio [2] -8-db table 7. rf characteristics continued t h =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v gs = 0 v; f = 1 mhz. fig 1. output capacitance as a function of drain-source voltage; typical values per section; capacitance value without internal matching 001aaj274 v ds (v) 060 40 20 150 100 200 250 c oss (pf) 50
BLF888_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01 16 december 2008 5 of 8 nxp semiconductors BLF888 uhf power ldmos transistor 7. package outline fig 2. package outline sot979a references outline version european projection issue date iec jedec jeita sot979a sot979a_po flanged ldmost ceramic package; 2 mounting holes; 4 leads sot979a e 1 e c q b c a e q l b u 2 h 1 u 1 h p w1 a b w3 w2 c a d 1 d f unit (1) mm max nom min 5.77 4.80 11.81 11.56 31.55 30.94 31.37 31.12 10.29 10.03 10.29 10.03 1.969 1.689 17.50 17.25 3.86 3.35 41.28 41.02 10.29 10.03 a dimensions bc 0.15 0.10 dd 1 ee 1 0.51 w 2 e 13.72 fhh 1 25.53 25.27 lp 3.30 3.05 q 3.02 2.77 q 35.56 u 1 u 2 0.25 inches max nom min 0.227 0.189 0.465 0.455 1.242 1.218 1.235 1.225 0.405 0.395 0.405 0.395 0.078 0.067 0.689 0.679 0.152 0.132 1.625 1.615 0.405 0.395 0.006 0.004 0.020 0.25 w 3 0.010 0.540 1.005 0.995 0.130 0.120 0.119 0.109 1.400 0.010 w 1 0 5 10 mm scale note 1. millimeter dimensions are derived from the original inch dimensions. 12 34 5 08-04-24 08-09-04
BLF888_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01 16 december 2008 6 of 8 nxp semiconductors BLF888 uhf power ldmos transistor 8. abbreviations 9. revision history table 8. abbreviations acronym description ccdf complementary cumulative distribution function dvb digital video broadcast dvb-t digital video broadcast - terrestrial ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor ofdm orthogonal frequency division multiplexing par peak-to-average power ratio rf radio frequency uhf ultra high frequency vswr voltage standing-wave ratio table 9. revision history document id release date data sheet status change notice supersedes BLF888_1 20081216 objective data sheet - -
BLF888_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01 16 december 2008 7 of 8 nxp semiconductors BLF888 uhf power ldmos transistor 10. legal information 10.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 10.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 10.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 11. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors BLF888 uhf power ldmos transistor ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 16 december 2008 document identifier: BLF888_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 12. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 ruggedness in class-ab operation. . . . . . . . . . 4 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 legal information. . . . . . . . . . . . . . . . . . . . . . . . 7 10.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7 10.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 10.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 10.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 11 contact information. . . . . . . . . . . . . . . . . . . . . . 7 12 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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